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	Wafer level packaging for gyroscope by Au/Si eutectic bonding
	Ruan, Y ; Zhang, DC ; Yang, ZC ; Wang, M ; Yu, XM
	2002
关键词	wafer level packaging anodic bonding Au/Si eutectic bonding MEMS gyroscope MEMS pressure sensor TEMPERATURE GOLD
英文摘要	This paper will focus on Au/Si eutectic bonding technology. We have set up and improved some MEMS models concerning this technique for discussion. Annealing temperature on bonding was also taken into consideration. Since hydrophilic surface has a large number of -OH groups, which can make two wafers in contact, we derive a hydrophilic surface from dipping the wafer in H2O/H2O2/NH4OH solution. Especially we use MEMS models with ANSYS to simulate and guide the fabrication of MEMS device. Furthermore, we have improved MEMS structure. Because its bonding temperature, voltage and pressure are low, by using the following technique we could get high density and more reliable MEMS device. We also have used this technology to fabricate gyroscope and some other MEMS devices. Classical Au/Si fusion bonding at 1000degreesC, and anodic at 450degreesC is not a commercially feasible process. We achieved Au/Si eutectic bonding technology for gyroscope and other MEMS device manufacture.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000179659300023&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Optics; Physics, Applied; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1117/12.483165
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293903]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ruan, Y,Zhang, DC,Yang, ZC,et al. Wafer level packaging for gyroscope by Au/Si eutectic bonding. 2002-01-01.

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