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	The annealing effect of Schottky contact on AlGaN/GaN
	Zhou, J ; Hao, YL ; Yang, ZJ ; Zhang, GY ; Wu, GY
	2004
关键词	AlGaN/GaN Schottky contact RTA leakage Current PACS 73.40.Sx 73.61.Ey GAN
英文摘要	The AlGaN/GaN samples were grown on sapphire substrates by MOCVD. Ti/Al/Ti/Au multi-layer film and Ni/Au bi-layer film were sputtered for Ohm contact and Schottky contact respectively. The optimal annealing temperature of Schottky contact was determined as 450 degrees C. The ideality factor and Schottky barrier height were calculated out from the I-V curves of Schottky contact. One fitting formula about the leakage current of Schottky contact was set up and its parameters dependence on the annealing temperature were discussed. The Parameter A was linear with the negative SBH. and the parameter B was related to the GaN material intrinsic factors.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293787]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhou, J,Hao, YL,Yang, ZJ,et al. The annealing effect of Schottky contact on AlGaN/GaN. 2004-01-01.

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