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	Fabrication and characteristics of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates
	Han, DD ; Wang, X ; Wang, Y ; Tian, DY ; Wang, W ; Liu, XY ; Kang, JF ; Han, RQ
	2004
关键词	SOURCE/DRAIN BARRIER TRANSISTORS MOSFETS SILICON
英文摘要	Ti- and Ni-germanides were fabricated on n-Ge (100) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The impacts of anneal temperature on the material the electrical properties of Ti- and Ni-germanide on n-Ge (100.) substrates were investigated. The low temperature similar to 300 degrees C annealing helps to obtain the optimized Schottky contact characteristics in both Ti-germanide/Ge and Ni-germanide/Ge contacts. The well-behaved Ti-germanides/n-Ge Schottky contacts with 0.34eV barrier height were achieved by using a 300 degrees C annealing process.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000227342200108&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293742]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Han, DD,Wang, X,Wang, Y,et al. Fabrication and characteristics of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates. 2004-01-01.

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