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	Abnormal off-state leakage current increasing with reduced silicon body thickness in nano-SOI devices
	Wang, WP ; Huang, R ; Zhang, GY ; Yang, SQ ; Wang, YY
	2004
英文摘要	A novel phenomenon is revealed in this paper, i.e.. when the channel doping concentration is heavy, the off-state current doesn't show the continuous decreasing trend with the decrease of silicon body thickness as most literatures reported. Detailed explanation was presented. Therefore, as far as LOP applications are concerned, in comparison with UTB MOSFET, slightly higher channel doping and much thicker silicon body thickness can be considered as a better choice for device design.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293736]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, WP,Huang, R,Zhang, GY,et al. Abnormal off-state leakage current increasing with reduced silicon body thickness in nano-SOI devices. 2004-01-01.

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