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	Oxide-Based RRAM Switching Mechanism: A New Ion-Transport-Recombination Model
	Gao, B. ; Yu, S. ; Xu, N. ; Liu, L. F. ; Sun, B. ; Liu, X. Y. ; Han, R. Q. ; Kang, J. F. ; Yu, B. ; Wang, Y. Y.
	2008
英文摘要	This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.; Engineering, Electrical & Electronic; Physics, Applied; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293511]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gao, B.,Yu, S.,Xu, N.,et al. Oxide-Based RRAM Switching Mechanism: A New Ion-Transport-Recombination Model. 2008-01-01.

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