Phase Shift Compensation of High Modulation Depth Multi-layer InGaAs/InAlAs SESAM | |
Chen, Lingling ; Zhang, Meng ; Cai, Yue ; Zhou, Chun ; Ren, Ling ; Zhang, Zhigang | |
2009 | |
关键词 | SESAM Phase Shift High Modulation Depth SATURABLE-ABSORBER LASER |
英文摘要 | A new InGaAs/InAlAs multi-layer design of broadband SESAM including precise phase shift compensation is proposed Simulation demonstrates a uniform modulation depth up to 25% for the wavelength from 1000 to 1080 nm; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000277829300298&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Optics; EI; CPCI-S(ISTP); 0 |
语种 | 英语 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/293201] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Chen, Lingling,Zhang, Meng,Cai, Yue,et al. Phase Shift Compensation of High Modulation Depth Multi-layer InGaAs/InAlAs SESAM. 2009-01-01. |
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