QQ客服 官方微博 反馈留言

	Study of Under Etching Characters of Si (100) in Surfactant Added TMAH
	Hu, Qifang ; Gao, Chengchen ; Hao, Yilong ; Zhang, Yangxi
	2011
关键词	TMAH Under etching Surfactant
英文摘要	This work focuses on the etching characteristic of (100) silicon wafer in surfactant added tetramethyl-ammonium-hydroxide (TMAH:(CH3)(4)NOH) solution. The experimental result shows that under etching effect in TMAH achieves a significant reduction by adding fatty alcohol ethoxylate (R-O (CH2-CH2)(n)-OH) in the solution. Synperonic-A series fatty-alcohol-ethoxylate with increasing length of ethylene oxide segments are used to carry out the experiment. Comparing with the pure TMAH, the maximum under etching rate in the surfactant added TMAH is reduced to three quarters. The etching loss of convex corners is negligible for shallow to medium-deep etching (<30 mu m).; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000308677000006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; EI; CPCI-S(ISTP); 1
语种	英语
DOI标识	10.4028/www.scientific.net/KEM.483.34
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293164]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hu, Qifang,Gao, Chengchen,Hao, Yilong,et al. Study of Under Etching Characters of Si (100) in Surfactant Added TMAH. 2011-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。