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	Statistical Analysis of Retention Behavior and Lifetime Prediction of HfO(x)-based RRAM
	Zhang, Lijie ; Huang, Ru ; Hsu, Yen-Ya ; Chen, Frederick T. ; Lee, Heng-Yuan ; Chen, Yu-Sheng ; Chen, Wei-Su ; Gu, Pei-Yi ; Liu, Wen-Hsing ; Wang, Shun-Min ; Tsai, Chen-Han ; Tsai, Ming-Jinn ; Chen, Pang-Shiu
	2011
关键词	lifetime data retention breakdown RRAM MECHANISM POWER
英文摘要	In this paper, statistical measurements on the retention behavior of the stable HfO(x)-based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is insensitive to temperature and cycling-aging. An empirical equation involving the voltage/thermal/cycling-stress acceleration is given for lifetime prediction. 10 years lifetime can be obtained with a constant read voltage of 0.2 V even at 160 degrees C. Also the set time of the RRAM extrapolated by the empirical equation coincides with the experiment value. In addition, the shallow Weibull slope of the retention time can be improved when the variations of the initial resistance is well controlled.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000295322100149&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293101]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Lijie,Huang, Ru,Hsu, Yen-Ya,et al. Statistical Analysis of Retention Behavior and Lifetime Prediction of HfO(x)-based RRAM. 2011-01-01.

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