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	A MIM diode with ultra abrupt switching process and high on/off current ratio
	Zhang, Lijie ; Huang, Ru
	2011
关键词	DIELECTRICS DENSITY CAPACITORS RADIATION MECHANISM
英文摘要	In this work, a TaOx-based Metal-Insulator-Metal (MIM) diode is demonstrated. This Cu/TaOx/W diode is fabricated with sputtering method without any high temperature process (similar to 400 degrees C), which shows promising compatabiltiy with CMOS back-end process. The fabricated diode exhibits abrupt switching process (similar to 3 mV/dec) with small switching voltage (similar to 0.7 V), high on/off current ratio more than 10(6), low leakage current (similar to pA). Current is limited when the diode is switched to the on-state to avoid the hard breakdown caused by the thermal run-away. On/off current ratio can be further improved to 10(8) by the limited current increase at the precondition of ensuring the safty of the diode. This MIM diode can be easily integrated into high density PCM or RRAM cross-point arrays due to its simple fabrication process. Its nearly ideal diode behavior with ultra low on-resistance can also be used as an ESD protection device or as a rectifying element in circuit.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000302650100058&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 1
语种	英语
DOI标识	10.1149/1.3572329
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292928]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Lijie,Huang, Ru. A MIM diode with ultra abrupt switching process and high on/off current ratio. 2011-01-01.

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