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	A Physical Based Analytic Model of RRAM Operation for Circuit Simulation
	Huang, P. ; Liu, X. Y. ; Li, W. H. ; Deng, Y. X. ; Chen, B. ; Lu, Y. ; Gao, B. ; Zeng, L. ; Wei, K. L. ; Du, G. ; Zhang, X. ; Kang, J. F.
	2012
英文摘要	A physical based analytic model of metal oxide based RRAM cell under DC and pulse operation modes is presented. In this model, the transport behaviors of oxygen vacancies and oxygen ions, metal conductivity, electron hopping and heat conduction and the parasitic capacitance and resistance effects are covered. The developed analytic model is verified and calibrated by measured data. Furthermore, we implement the analytic model in a 2x2 RRAM array simulation and investigate the reliability of RRAM array for the first time.; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/IEDM.2012.6479110
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292772]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, P.,Liu, X. Y.,Li, W. H.,et al. A Physical Based Analytic Model of RRAM Operation for Circuit Simulation. 2012-01-01.

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