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	3D Parallel Full Band Ensemble Monte Carlo Devices Simulation for Nano Scale Devices Application
	Liu, Xiaoyan ; Wei, Kangliang ; Du, Gang ; Zhang, Wei ; Zhang, Pingwen
	2012
关键词	ELECTRON-TRANSPORT SOI MOSFETS SEMICONDUCTORS
英文摘要	A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano scale semiconductor devices especially for the non planar structures. The transition rates for the various scattering processes including phonon scattering, ionized impurity scattering, remote coulomb scattering, surface roughness scattering and surface phonon scattering are calculated based on Fermi's golden rule. The quantum effect, quantum correction has been included using the effective potential (EP) method. 3D Poisson equation with non uniform hexahedron grid is solved self-consistently after the carriers' free flight and scattering. We parallelize the 3D MC device simulator by utilizing the Trillions software package.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319824700100&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6467681
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292697]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Xiaoyan,Wei, Kangliang,Du, Gang,et al. 3D Parallel Full Band Ensemble Monte Carlo Devices Simulation for Nano Scale Devices Application. 2012-01-01.

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