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	Two-dimensional Self-limiting Oxidation for Non-planar Silicon Nano-devices from Top-down Approach: Experiments and Modeling
	Fan, Jiewen ; Xu, Qiumin ; Jiang, Zizhen ; Ai, Yujie ; Wang, Runsheng ; Huang, Ru
	2012
关键词	THERMAL-OXIDATION NANOWIRES SI
英文摘要	A CMOS compatible method to fabricate non-planar silicon nanowires is realized on bulk silicon substrate using self-limiting oxidation with high control-capability of the nanowire size and shape. A predictive model of 2-D self-limiting oxidation for non-planar silicon nanodevices is also proposed and shows its good agreement with the experimental data in a wide range of oxidation temperatures, process time, and variety initial silicon core sizes. The shape evolution of silicon core during oxidation is successfully modeled and is verified by high-resolution SEM. Unlike traditional planar oxidation model which is limited in planar oxidation without any stress, the proposed predictive model is based on cylindrical Deal-Grove (D-G) equation including stress effect, and takes into account of the orientation dependence and the flow of SiO2 as viscous fluid, which can be successfully applied to process engineering of non-planar Si nanowire transistors.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000325403600002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1149/1.3694290
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292678]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Fan, Jiewen,Xu, Qiumin,Jiang, Zizhen,et al. Two-dimensional Self-limiting Oxidation for Non-planar Silicon Nano-devices from Top-down Approach: Experiments and Modeling. 2012-01-01.

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