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	Multi-Region DCIV Spectroscopy and Impacts on the Design of STI-based LDMOSFETs
	He, Yandong ; Zhang, Ganggang ; Han, Lin ; Zhang, Xing
	2013
关键词	multi-region DCIV spectroscopy STI-based LDMOSFET reliability TRANSISTORS
英文摘要	A probing technique, multi-region DCIV spectroscopy, has been investigated systematically. This non-destructive method demonstrated the attractive capability on profiling the interface states overall in STI-based LDMOSFETs. The sensitivity on the interface state generation at channel and accumulation region was superior to the conventional Id-Vg method. Based on the device characterization and stress tests, the dependence of spectroscopic features on channel, accumulation and poly overlap length was investigated and verified. The optimum device design to suppress device degradation was proposed.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000325097500178&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/IRPS.2013.6532118
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292601]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yandong,Zhang, Ganggang,Han, Lin,et al. Multi-Region DCIV Spectroscopy and Impacts on the Design of STI-based LDMOSFETs. 2013-01-01.

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