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	Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
	Liu, Li-Feng ; Kang, Jin-Feng ; Xu, Nuo ; Sun, Xiao ; Chen, Chen ; Sun, Bing ; Wang, Yi ; Liu, Xiao-Yan ; Zhang, Xing ; Han, Ru-Qi
	2008
关键词	resistive memory TiO2 Gd doping FILMS
英文摘要	Binary nietal-oxide-based resistive memory devices generally show broad dispersions of resistive switching parameters with continuous resistive switching, and this leads to severe readout and control hazards. In this paper, we report improvements of the resistive switching characteristics in TiO2-based resistive memory devices induced by the Gd doping of TiO2 films. The effect of Gd doping on the resistive switching of TiO2-based resistive memory devices is discussed.; Physics, Applied; SCI(E); EI; CPCI-S(ISTP); 21
语种	英语
DOI标识	10.1143/JJAP.47.2701
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292086]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Li-Feng,Kang, Jin-Feng,Xu, Nuo,et al. Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices. 2008-01-01.

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