A Compact Diode Array Model for Phase Change Memory Application

doi:10.1166/jctn.2013.3268

CORC > 北京大学 > 信息科学技术学院

	A Compact Diode Array Model for Phase Change Memory Application
	Su, Yanmei ; Ye, Yue ; Wang, Cheng ; He, Hongyu ; Liang, Hailang ; Wang, Hao ; He, Jin
刊名	journal of computational and theoretical nanoscience
	2013
关键词	PCM PN Diode Array Physical Compact Model TEMPERATURE SILICON DEVICE
DOI	10.1166/jctn.2013.3268
英文摘要	This paper describes a physical compact diode array model for driving devices in Phase Change Memory (PCM) application. This model is valid for various structural parameters including geometry parameters and doping concentrations. Based on the distributions of carrier current, a rigorous derivation of the leakage coefficient from classical diode equations and the simplified bipolar device formulations has been performed. The model is extensively verified by comparisons with measured data, and it is useful for the studying of physical mechanism in carrier transmission. This concise model has an open model structure, and can be applied in different fabrication process with the parameter extraction to illustrate the device physics.; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 0; ARTICLE; 11; 2694-2700; 10
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291750]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Su, Yanmei,Ye, Yue,Wang, Cheng,et al. A Compact Diode Array Model for Phase Change Memory Application[J]. journal of computational and theoretical nanoscience,2013.
APA	Su, Yanmei.,Ye, Yue.,Wang, Cheng.,He, Hongyu.,Liang, Hailang.,...&He, Jin.(2013).A Compact Diode Array Model for Phase Change Memory Application.journal of computational and theoretical nanoscience.
MLA	Su, Yanmei,et al."A Compact Diode Array Model for Phase Change Memory Application".journal of computational and theoretical nanoscience (2013).