High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K   Gate Dielectrics Fabricated at Low Temperature

doi:10.1166/sl.2013.2837

CORC > 北京大学 > 信息科学技术学院

	High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature
	Han, Dedong ; Cai, Jian ; Wang, Wei ; Wang, Liangliang ; Wang, Yi ; Liu, Lifeng ; Zhang, Shengdong
刊名	sensor letters
	2013
关键词	High Performance Aluminum-Doped Zinc Oxide Thin-Film Transistor High-K Low-Temperature Processing ROOM-TEMPERATURE
DOI	10.1166/sl.2013.2837
英文摘要	We report on the fabrication and characteristics of low-driven-voltage and high mobility thin film transistors (TFTs) using Aluminum-doped ZnO as an active channel layer grown by using radio frequency (rf) magnetron sputtering technique. The AZO-TFTs are fabricated on glass substrates at room temperature. The TFT device structure used in this study is a bottom gate type, which consists of high-K HfO2 film as the gate dielectric and indium tin oxide (ITO) as source and drain electrodes. The sputtering and post-annealing conditions of the gate insulators are optimized for leakage current and TFT performances. The device shows a low threshold voltage of 2.2 V, an high on/off ratio of 1.0 x 10(7), a high field effect mobility of 26.1 cm(2)N . s, a subthreshold swing of 0.25 V/decade, and the off current of less than 10(-12) A at a maximum device processing temperature of 180 degrees C. The AZO-TFTs is a very promising low-cost optoelectronic device for the next generation of invisible electronics due to transparency, high mobility, and low-temperature processing.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330418100019&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation; Physics, Applied; SCI(E); EI; 2; ARTICLE; 8; 1509-1512; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291719]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Han, Dedong,Cai, Jian,Wang, Wei,et al. High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature[J]. sensor letters,2013.
APA	Han, Dedong.,Cai, Jian.,Wang, Wei.,Wang, Liangliang.,Wang, Yi.,...&Zhang, Shengdong.(2013).High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature.sensor letters.
MLA	Han, Dedong,et al."High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature".sensor letters (2013).