Investigation of strain effect on the hole mobility in GOI tri-gate   pFETs including quantum confinement

doi:10.1088/1674-1056/23/10/108501

CORC > 北京大学 > 信息科学技术学院

	Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement
	Qin Jie-Yu ; Du Gang ; Liu Xiao-Yan
刊名	chinese physics b
	2014
关键词	strain quantum effect tri-gate GOI BAND-STRUCTURE SILICON THICKNESS NANOWIRES LAYER
DOI	10.1088/1674-1056/23/10/108501
英文摘要	The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top corners of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000344057600098&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Multidisciplinary; SCI(E); EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 0; ARTICLE; xyliu@ime.pku.edu.cn; 10; 23
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291525]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qin Jie-Yu,Du Gang,Liu Xiao-Yan. Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement[J]. chinese physics b,2014.
APA	Qin Jie-Yu,Du Gang,&Liu Xiao-Yan.(2014).Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement.chinese physics b.
MLA	Qin Jie-Yu,et al."Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement".chinese physics b (2014).