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	Numerical Simulation Study on Electron Mobility of Independent DG MOSFETs
	Chen, Lin ; Xu, Yiwen ; Zhang, Lining ; Zhou, Wang ; He, Frank
	2009
关键词	SI INVERSION-LAYERS SURFACE-ROUGHNESS LIMITED MOBILITY VOLUME INVERSION GATE FIELD TRANSISTORS INTERFACE
英文摘要	Numerical simulation study on electron mobility in independent DG MOSFETs with back gate biased in accumulation, flatband and inversion operation regions is presented in this paper. A numerical simulation program of the electron transport in the independent DG MOSFETs, which includes both phonon and surface roughness scattering mechanisms, is developed. From it, the dependence characteristics of the DG MOSFET electron mobility on the device operation conditions and the structure parameters are discussed. It is shown that DG MOSFET exhibits higher mobility when back gate is biased in inversion region compared to simulation results when back gate is in flat-band or accumulation regions. Mobility enhancement is observed in devices with thinner silicon film, when higher field is applied, which can be attributed to "volume inversion" in DG MOSFET.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000289818000015&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/EDSSC.2009.5394190
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/260961]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Lin,Xu, Yiwen,Zhang, Lining,et al. Numerical Simulation Study on Electron Mobility of Independent DG MOSFETs. 2009-01-01.

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