Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires

doi:10.1016/j.physleta.2011.12.040

CORC > 北京大学 > 信息科学技术学院

	Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires
	Shi, Lihong ; Chen, Jie ; Zhang, Gang ; Li, Baowen
刊名	physics letters a
	2012
关键词	Thermoelectric figure of merit ZnO nanowires ZINC-OXIDE ROOM-TEMPERATURE CONDUCTIVITY CONFINEMENT
DOI	10.1016/j.physleta.2011.12.040
英文摘要	By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate the impact of gallium (Ga) doping on the thermoelectric property of [0001] zinc oxide nanowires (Zn1-xGaxO NWs). Our results show that the thermoelectric performance of the Zn1-xGaxO NWs is strongly dependent on the Ga contents. The maximum achievable room temperature thermoelectric figure of merit in Zn1-xGaxO NW can be increased by a factor of 2.5 at Ga content of 0.04, compared with the ZT of pure ZnO NWs. This may open up ZnO NW arrays applications in possible thermoelectric energy generator and cooler. (C) 2011 Elsevier B.V. All rights reserved.; Physics, Multidisciplinary; SCI(E); 0; ARTICLE; 8-9; 978-981; 376
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/234697]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shi, Lihong,Chen, Jie,Zhang, Gang,et al. Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires[J]. physics letters a,2012.
APA	Shi, Lihong,Chen, Jie,Zhang, Gang,&Li, Baowen.(2012).Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires.physics letters a.
MLA	Shi, Lihong,et al."Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires".physics letters a (2012).