Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor   Device on a (111) Silicon Wafer

doi:10.1002/smll.201201599

CORC > 北京大学 > 信息科学技术学院

	Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer
	Yu, Xiao ; Wang, Yuchen ; Zhou, Hong ; Liu, Yanxiang ; Wang, Yi ; Li, Tie ; Wang, Yuelin
刊名	small
	2013
关键词	field-effect transistors nanowires silicon top-down process wafers NANOTUBE
DOI	10.1002/smll.201201599
英文摘要	The unique anisotropic wet-etching mechanism of a (111) silicon wafer facilitates the highly controllable top-down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire-based field-effect transistor structure on the fabricated SiNW. Copyright ? 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 4; ARTICLE; 4; 525-530; 9
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/225814]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, Xiao,Wang, Yuchen,Zhou, Hong,et al. Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer[J]. small,2013.
APA	Yu, Xiao.,Wang, Yuchen.,Zhou, Hong.,Liu, Yanxiang.,Wang, Yi.,...&Wang, Yuelin.(2013).Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer.small.
MLA	Yu, Xiao,et al."Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer".small (2013).