Electronic Structure and Band Alignment at an Epitaxial   Spinel/Perovskite Heterojunction

doi:10.1021/am5036219

CORC > 北京大学 > 信息科学技术学院

	Electronic Structure and Band Alignment at an Epitaxial Spinel/Perovskite Heterojunction
	Qiao, Liang ; Li, Wei ; Xiao, Haiyan ; Meyer, Harry M. ; Liang, Xuelei ; Nguyen, N. V. ; Weber, William J. ; Biegalski, Michael D.
刊名	acs applied materials interfaces
	2014
关键词	spinel/perovskite heterojunction electronic structure band alignment photoemission RAY PHOTOEMISSION SPECTRA THIN-FILMS PRECISE DETERMINATION COBALT OXIDES CORE-LEVEL SRTIO3 CO3O4 INTERFACE SURFACES OFFSETS
DOI	10.1021/am5036219
英文摘要	The electronic properties of solid solid interfaces play critical roles in a variety of technological applications. Recent advances of film epitaxy and characterization techniques have demonstrated a wealth of exotic phenomena at interfaces of oxide materials, which are critically dependent on the alignment of their energy bands across the interface. Here we report a combined photoemission and electrical investigation of the electronic structures across a prototypical spinel/perovskite heterojunction. Energy-level band alignment at an epitaxial Co3O4/SrTiO3(001) heterointerface indicates a chemically abrupt, type I heterojunction without detectable band bending at both the film and substrate. The unexpected band alignment for this typical p-type semiconductor on SrTiO3 is attributed to its intrinsic d-d interband excitation, which significantly narrows the fundamental band gap between the top of the valence band and the bottom of the conduction band. The formation of the type I heterojunction with a flat-band state results in a simultaneous confinement of both electrons and holes inside the Co3O4 layer, thus rendering the epitaxial Co3O4/SrTiO3(001) heterostructure to be a very promising material for high-efficiency luminescence and optoelectronic device applications.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000341122000123&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; SCI(E); EI; 1; ARTICLE; qiaol@ornl.gov; biegalskim@ornl.gov; 16; 14338-14344; 6
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/209828]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qiao, Liang,Li, Wei,Xiao, Haiyan,et al. Electronic Structure and Band Alignment at an Epitaxial Spinel/Perovskite Heterojunction[J]. acs applied materials interfaces,2014.
APA	Qiao, Liang.,Li, Wei.,Xiao, Haiyan.,Meyer, Harry M..,Liang, Xuelei.,...&Biegalski, Michael D..(2014).Electronic Structure and Band Alignment at an Epitaxial Spinel/Perovskite Heterojunction.acs applied materials interfaces.
MLA	Qiao, Liang,et al."Electronic Structure and Band Alignment at an Epitaxial Spinel/Perovskite Heterojunction".acs applied materials interfaces (2014).