Modeling for the collector current in SOI gate-controlled hybrid transistor

CORC > 北京大学 > 信息科学技术学院

	Modeling for the collector current in SOI gate-controlled hybrid transistor
	Huang, Ru ; Wang, Yangyuan ; Han, Ruqi
刊名	tien tzu hsueh paoacta electronica sinica
	1997
英文摘要	Based on its physical mechanism, a new analytical model for the collector current in SOI gate-controlled hybrid transistor (GCHT) is presented. Considering both drift and diffusion components, the gated current model is founded. The relation between the surface potential and the applied base bias is investigated for the first time, which can explain that the collector current for the hybrid transistor and the bipolar transistor tend to merge at high base bias. The calculated results using this model are in good agreement with the PISCES numerical results and the experimental data.; EI; 0; 8; 109-112; 25
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/163365]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Ru,Wang, Yangyuan,Han, Ruqi. Modeling for the collector current in SOI gate-controlled hybrid transistor[J]. tien tzu hsueh paoacta electronica sinica,1997.
APA	Huang, Ru,Wang, Yangyuan,&Han, Ruqi.(1997).Modeling for the collector current in SOI gate-controlled hybrid transistor.tien tzu hsueh paoacta electronica sinica.
MLA	Huang, Ru,et al."Modeling for the collector current in SOI gate-controlled hybrid transistor".tien tzu hsueh paoacta electronica sinica (1997).