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	Modifying residual stress and stress gradient in LPCVD SI3N4 film with ion implantation
	Shi, WD ; Zhang, HX ; Wang, SS ; Zhang, GB ; Li, ZH
	2005
关键词	LPCVD Si3N4 film residual stress stress gradient ion implantation INTERNAL-STRESS THIN-FILMS
英文摘要	This paper presents a method for modifying residual stress in LPCVD Si3N4 films. Utilizing ion implantation technology, the residual stress and stress gradient in Si3N4 film has been successfully modified with a wide adjustable range. An analytical model has been developed to describe the modification. The dosage and energy of ion implantation can be controlled accurately, and therefore the presented method can modify stress level precisely. With this method, the mean residual stress in a Si3N4 film was adjusted from 1.2GPa tensile to -0.1GPa compressive continuously. Moreover, cantilever curling caused by stress gradient was reduced efficiently.; Engineering, Biomedical; Engineering, Electrical & Electronic; Engineering, Mechanical; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153509]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shi, WD,Zhang, HX,Wang, SS,et al. Modifying residual stress and stress gradient in LPCVD SI3N4 film with ion implantation. 2005-01-01.

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