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	Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias
	Yang, Jiaqi ; Pan, Junyan ; Huang, Lihua ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng ; Zhang, L. F. ; Zhu, Z. W. ; Liao, C. C. ; Wu, H. M.
	2008
关键词	DEGRADATION LEVEL
英文摘要	In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high vertical bar V-ds vertical bar region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial Is. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265971001003&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2008.4734625
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153435]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, Jiaqi,Pan, Junyan,Huang, Lihua,et al. Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias. 2008-01-01.

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