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AN ANALYTICAL MODEL FOR DETERMINING CARRIER TRANSPORT MECHANISM OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS
MA, PX ; ZHANG, LC ; ZHAO, BY ; WANG, YY
刊名ieee电子器件汇刊
1995
关键词BICMOS TECHNOLOGY DOPED SILICON CURRENT GAIN INTERFACE CONTACTS DEVICES
DOI10.1109/16.464417
英文摘要An analytical model is proposed by including carrier transport mechanisms which previous unified analytical models do not consider: minority carrier combination at both sides of polysilicon-silicon interfacial oxide and thermionic emission over segregation potential barrier for determining the precise carrier transport mechanisms which govern current gain and specific emitter interfacial resistivity, This approach allows us to gain an insight into carrier transport mechanisms and provides a distinct image for polysilicon emitter bipolar devices. With the consideration of the interfacial capture cross section as a function of temperature, the dependence of current gain for devices given an HF etch prior to polysilicon deposition on temperature is first explained successfully. For improving device performance, some directive suggestions are presented.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1995RW01000011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 14; ARTICLE; 10; 1789-1797; 42
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/153161]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
MA, PX,ZHANG, LC,ZHAO, BY,et al. AN ANALYTICAL MODEL FOR DETERMINING CARRIER TRANSPORT MECHANISM OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS[J]. ieee电子器件汇刊,1995.
APA MA, PX,ZHANG, LC,ZHAO, BY,&WANG, YY.(1995).AN ANALYTICAL MODEL FOR DETERMINING CARRIER TRANSPORT MECHANISM OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS.ieee电子器件汇刊.
MLA MA, PX,et al."AN ANALYTICAL MODEL FOR DETERMINING CARRIER TRANSPORT MECHANISM OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS".ieee电子器件汇刊 (1995).
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