A single-mask dry-release process for fabrication of high aspect ratio   SOI MEMS devices

doi:10.1007/s11431-012-5089-x

CORC > 北京大学 > 信息科学技术学院

	A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices
	Yang ZhenChuan ; Wei YuMin ; Mao Xu ; Yan GuiZhen
刊名	science china technological sciences
	2013
关键词	SOI dry release lag effect accelerometer footing effect WAFER
DOI	10.1007/s11431-012-5089-x
英文摘要	A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices is presented, which takes advantage of the lag effect in silicon DRIE (deep reactive ion etching). The wide trenches and the releasing holes are etched to the buried oxide in the first-step DRIE whereas the narrow trenches are still connected due to the lag effect. After the buried oxide is removed by wet etching through the opened releasing holes and wide trenches, the narrow trenches are etched through by the second-step DRIE. Not only can the sticking problems be avoided, but also the footing effect during the DRIE can be partially suppressed. The feasibility of the proposed technique was verified by implementing a capacitive accelerometer. The scale factor and the non-linearity of the fabricated accelerometer were measured to be 63.4 mV/g and 0.1% with the measurement range of +/- 1 g, respectively.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000314913300014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Multidisciplinary; Materials Science, Multidisciplinary; SCI(E); EI; 1; ARTICLE; 2; 387-391; 56
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152507]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang ZhenChuan,Wei YuMin,Mao Xu,et al. A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices[J]. science china technological sciences,2013.
APA	Yang ZhenChuan,Wei YuMin,Mao Xu,&Yan GuiZhen.(2013).A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices.science china technological sciences.
MLA	Yang ZhenChuan,et al."A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices".science china technological sciences (2013).