Experimental study on the oxide trap coupling effect in metal oxide   semiconductor field effect transistors with HfO2 gate dielectrics

doi:10.1063/1.4885394

CORC > 北京大学 > 信息科学技术学院

	Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics
	Ren, Pengpeng ; Wang, Runsheng ; Jiang, Xiaobo ; Qiu, Yingxin ; Liu, Changze ; Huang, Ru
刊名	应用物理学快报
	2014
DOI	10.1063/1.4885394
英文摘要	In this Letter, the coupling effect between multi-traps in HfO2 gate dielectrics is experimentally studied in scaled high-kappa/metal-gate metal oxide semiconductor field effect transistors (MOSFETs). Deviated from conventional understanding, mechanism that affects trap coupling is found, which is originated from local carrier density perturbation due to random dopant fluctuation (RDF) in the channel. The competition of conventional Coulomb repulsion effect and RDF induced local carrier density perturbation effect results in the nonmonotonic voltage dependence of trap coupling intensity. (C) 2014 AIP Publishing LLC.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000339114100071&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 3; ARTICLE; r.wang@pku.edu.cn; ruhuang@pku.edu.cn; 26; 104
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152071]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ren, Pengpeng,Wang, Runsheng,Jiang, Xiaobo,et al. Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics[J]. 应用物理学快报,2014.
APA	Ren, Pengpeng,Wang, Runsheng,Jiang, Xiaobo,Qiu, Yingxin,Liu, Changze,&Huang, Ru.(2014).Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics.应用物理学快报.
MLA	Ren, Pengpeng,et al."Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics".应用物理学快报 (2014).