Temperature-Triggered Sulfur Vacancy Evolution in Monolayer   MoS2/Graphene Heterostructures

doi:10.1002/smll.201602967

CORC > 北京大学 > 化学与分子工程学院

	Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures
	Liu, Mengxi ; Shi, Jianping ; Li, Yuanchang ; Zhou, Xiebo ; Ma, Donglin ; Qi, Yue ; Zhang, Yanfeng ; Liu, Zhongfan
刊名	SMALL
	2017
关键词	SINGLE-LAYER MOS2 AUGMENTED-WAVE METHOD MOLYBDENUM-DISULFIDE AU FOILS ATOMIC DEFECTS BANDGAP GROWTH SEMICONDUCTOR NANOSHEETS STATES
DOI	10.1002/smll.201602967
英文摘要	The existence of defects in 2D semiconductors has been predicted to generate unique physical properties and markedly influence their electronic and optoelectronic properties. In this work, it is found that the monolayer MoS2 prepared by chemical vapor deposition is nearly defect-free after annealing under ultrahigh vacuum conditions at approximate to 400 K, as evidenced by scanning tunneling microscopy observations. However, after thermal annealing process at approximate to 900 K, the existence of dominant single sulfur vacancies and relatively rare vacancy chains (2S, 3S, and 4S) is convinced in monolayer MoS2 as-grown on Au foils. Of particular significance is the revelation that the versatile vacancies can modulate the band structure of the monolayer MoS2, leading to a decrease of the bandgap and an obvious n-doping effect. These results are confirmed by scanning tunneling spectroscopy data as well as first-principles theoretical simulations of the related morphologies and the electronic properties of the various defect types. Briefly, this work should pave a novel route for defect engineering and hence the electronic property modulation of three-atom-thin 2D layered semiconductors.; National Natural Science Foundation of China [51472008, 51290272, 21201012, 21603045, 51121091, 51072004, 51201069]; Ministry of Science and Technology of China [2016YFA0200103, 2013CB932603]; Open Research Fund Program of the State Key Laboratory of Low Dimensional Quantum Physics [KF201601]; Chinese Academy of Sciences-Peking University Pioneer Cooperation Team; SCI(E); ARTICLE; 40; 13
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/484597]
专题	化学与分子工程学院工学院
推荐引用方式 GB/T 7714	Liu, Mengxi,Shi, Jianping,Li, Yuanchang,et al. Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures[J]. SMALL,2017.
APA	Liu, Mengxi.,Shi, Jianping.,Li, Yuanchang.,Zhou, Xiebo.,Ma, Donglin.,...&Liu, Zhongfan.(2017).Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures.SMALL.
MLA	Liu, Mengxi,et al."Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures".SMALL (2017).