High electron mobility and quantum oscillations in non-encapsulated   ultrathin semiconducting Bi2O2Se

doi:10.1038/NNANO.2017.43

CORC > 北京大学 > 化学与分子工程学院

	High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
	Wu, Jinxiong ; Yuan, Hongtao ; Meng, Mengmeng ; Chen, Cheng ; Sun, Yan ; Chen, Zhuoyu ; Dang, Wenhui ; Tan, Congwei ; Liu, Yujing ; Yin, Jianbo ; Zhou, Yubing ; Huang, Shaoyun ; Xu, H. Q. ; Cui, Yi ; Hwang, Harold Y. ; Liu, Zhongfan ; Chen, Yulin ; Yan, Binghai ; Peng, Hailin
刊名	NATURE NANOTECHNOLOGY
	2017
关键词	FIELD-EFFECT TRANSISTORS BLACK PHOSPHORUS MOS2 TRANSISTORS GRAPHENE TRANSITION FILMS GAS
DOI	10.1038/NNANO.2017.43
英文摘要	High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research(1-9). However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present(10). Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of similar to 0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of > 20,000 cm(2) V-1 s(-1) is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition(11) and at the LaAlO3-SrTiO3 interface(12), making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm(2) V-1 s(-1)), large current on/off ratios (> 10(6)) and near-ideal subthreshold swing values (similar to 65 mV dec(-1)) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.; National Basic Research Program of China [2014CB932500, 2016YFA0200101]; National Natural Science Foundation of China [21525310]; National Program for Support of Top-Notch Young Professionals; Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]; SCI(E); ARTICLE; 6; 530-+; 12
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/473145]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Jinxiong,Yuan, Hongtao,Meng, Mengmeng,et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se[J]. NATURE NANOTECHNOLOGY,2017.
APA	Wu, Jinxiong.,Yuan, Hongtao.,Meng, Mengmeng.,Chen, Cheng.,Sun, Yan.,...&Peng, Hailin.(2017).High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.NATURE NANOTECHNOLOGY.
MLA	Wu, Jinxiong,et al."High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se".NATURE NANOTECHNOLOGY (2017).