Edge-States-Induced Disruption to the Energy Band Alignment at   Thickness-Modulated Molybdenum Sulfide Junctions

doi:10.1002/aelm.201600048

CORC > 北京大学 > 化学与分子工程学院

	Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions
	Guo, Yao ; Yin, Jianbo ; Wei, Xianlong ; Tan, Zhenjun ; Shu, Jiapei ; Liu, Bo ; Zeng, Yi ; Gao, Song ; Peng, Hailin ; Liu, Zhongfan ; Chen, Qing
刊名	ADVANCED ELECTRONIC MATERIALS
	2016
关键词	SCANNING PHOTOCURRENT MICROSCOPY DER-WAALS HETEROJUNCTION P-N DIODE MOS2 DISULFIDE WSE2 SEMICONDUCTOR GENERATION CONTACT HETEROSTRUCTURES
DOI	10.1002/aelm.201600048
英文摘要	National Basic Research Program of China [2012CB932702, 2014CB932500]; National Natural Science Foundation of China [11374022, 61321001, 21173004, 21222303]; National Program for Support of Top-Notch Young Professionals; SCI(E); ARTICLE; hlpeng@pku.edu.cn; zfliu@pku.edu.cn; qingchen@pku.edu.cn; 8; 2
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/456956]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Guo, Yao,Yin, Jianbo,Wei, Xianlong,et al. Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions[J]. ADVANCED ELECTRONIC MATERIALS,2016.
APA	Guo, Yao.,Yin, Jianbo.,Wei, Xianlong.,Tan, Zhenjun.,Shu, Jiapei.,...&Chen, Qing.(2016).Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions.ADVANCED ELECTRONIC MATERIALS.
MLA	Guo, Yao,et al."Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions".ADVANCED ELECTRONIC MATERIALS (2016).