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	Ionization potentials of semiconductors by GW and hybrid functional approaches; Ionization potentials of semiconductors by GW and hybrid functional approaches
	Hong Jiang
	2014
关键词	correction corrected practically founded conduction perturbation spite solids augmented interfaces correction corrected practically founded conduction perturbation spite solids augmented interfaces
英文摘要	The ionization potential(IP) is the key to determine the positions of valence and conduction band edges of a semiconductor with respect to the vacuum level, which play a crucial role in physical and chemical properties of surfaces and interfaces. In spite of its far-reaching significance, theoretica...; The ionization potential(IP) is the key to determine the positions of valence and conduction band edges of a semiconductor with respect to the vacuum level, which play a crucial role in physical and chemical properties of surfaces and interfaces. In spite of its far-reaching significance, theoretica...; 中国科学院计算机网络信息中心超级计算中心; 2
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/451651]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Hong Jiang. Ionization potentials of semiconductors by GW and hybrid functional approaches, Ionization potentials of semiconductors by GW and hybrid functional approaches. 2014-01-01.

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