A new type of organometallic system for high density data storage by   scanning tunneling microscopy

doi:10.1016/S0009-2614(97)00513-7

CORC > 北京大学 > 化学与分子工程学院

	A new type of organometallic system for high density data storage by scanning tunneling microscopy
	Gao, HJ ; Bian, ZX ; Chen, HY ; Xue, ZQ ; Pang, SJ
刊名	化学物理学快报
	1997
关键词	ATOMIC-FORCE MICROSCOPE THIN-FILMS SURFACE TIP STM
DOI	10.1016/S0009-2614(97)00513-7
英文摘要	We report a new type of organometallic system, Ag-toluylene 2,4-dicarbamidonitrite (TDCN) composite thin film, for ultrahigh density data storage devices by scanning tunneling microscopy (STM). The Ag-TDCN thin film was prepared on a highly oriented pyrolytic graphite (HOPG) substrate using an ionized-cluster-beam (ICE) deposition method. Marks can be created on the thin film by employing a voltage pulse between the STM tip and the surface of the HOPG substrate. The size of the created marks is about 50 nm and the corresponding data storage density is about 10(11) bits/cm(2). The mechanism for the data storage can be attributed to the conductance transition in the complex system. This result shows a great potential for this new kind of organometallic composite system to find application in ultrahigh density data storage. (C) 1997 Published by Elsevier Science B.V.; Chemistry, Physical; Physics, Atomic, Molecular & Chemical; SCI(E); 6; ARTICLE; 5-6; 459-462; 272
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/258280]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Gao, HJ,Bian, ZX,Chen, HY,et al. A new type of organometallic system for high density data storage by scanning tunneling microscopy[J]. 化学物理学快报,1997.
APA	Gao, HJ,Bian, ZX,Chen, HY,Xue, ZQ,&Pang, SJ.(1997).A new type of organometallic system for high density data storage by scanning tunneling microscopy.化学物理学快报.
MLA	Gao, HJ,et al."A new type of organometallic system for high density data storage by scanning tunneling microscopy".化学物理学快报 (1997).