High resolution LAPS and SPIM

doi:10.1016/j.elecom.2010.03.026

CORC > 北京大学 > 化学与分子工程学院

	High resolution LAPS and SPIM
	Chen, Li ; Zhou, Yinglin ; Jiang, Shihong ; Kunze, Julia ; Schmuki, Patrik ; Krause, Steffi
刊名	电化学通讯
	2010
关键词	Anodic oxide Two-photon effect High resolution potential and impedance measurements LAPS SPIM PHOTOINDUCED IMPEDANCE MICROSCOPY ADDRESSABLE POTENTIOMETRIC SENSOR SPATIAL-RESOLUTION SILICON
DOI	10.1016/j.elecom.2010.03.026
英文摘要	The resolution of photocurrent measurements at field-effect capacitors as used in light-addressable potentiometric sensors (LAPS) and scanning photo-induced impedance microscopy (SPIM) has been investigated using silicon on sapphire (SOS) substrates illuminated at different wavelengths. Using a two-photon effect in silicon (lambda = 1250 nm) to generate the photocurrent, genuine submicrometer resolution has been demonstrated for LAPS and SPIM. Improved sensitivity for both LAPS and SPIM was obtained using a 6.7 nm thick gate oxide on SOS anodically grown in 0.1 M HCl. (C) 2010 Elsevier B.V. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000279215700012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; SCI(E); EI; 15; ARTICLE; 6; 758-760; 12
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/243850]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Chen, Li,Zhou, Yinglin,Jiang, Shihong,et al. High resolution LAPS and SPIM[J]. 电化学通讯,2010.
APA	Chen, Li,Zhou, Yinglin,Jiang, Shihong,Kunze, Julia,Schmuki, Patrik,&Krause, Steffi.(2010).High resolution LAPS and SPIM.电化学通讯.
MLA	Chen, Li,et al."High resolution LAPS and SPIM".电化学通讯 (2010).