| Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation | |
| Liu, Gai ; Du, Gang ; Lu, Tiao ; Liu, Xiaoyan ; Zhang, Pingwen ; Zhang, Xing | |
| 2013 | |
| 关键词 | Boltzmann transport equation (BTE) double-gate FETs numerical simulation quasi-ballistic transport BACKSCATTERING COEFFICIENT EXTRACTION NANOSCALE MOSFETS POISSON SYSTEM MONTE-CARLO WENO-SOLVER TRANSISTORS MOBILITY DEVICES MODEL |
| 英文摘要 | In this study, we simulate double-gate MOSFET using a 2-D direct Boltzmann transport equation solver. Simulation results are interpreted by quasi-ballistic theory. It is found that the relation between average carrier velocity at virtual source and back-scattering coefficient needs to be modified due to the oversimplified approximations of the original model. A 1-D potential profile model also needs to be extended to better determine the kT-layer length. The key expression for back-scattering coefficient is still valid, but a field-dependent mean free path is needed to be taken into account.; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 0; ARTICLE; 2; 168-173; 12 |
| 语种 | 英语 |
| 出处 | SCI ; EI |
| 出版者 | ieee 纳米技术汇刊 |
| 内容类型 | 其他 |
| 源URL | [http://hdl.handle.net/20.500.11897/152355]  |
| 专题 | 数学科学学院 信息科学技术学院 工学院 |
| 推荐引用方式 GB/T 7714 | Liu, Gai,Du, Gang,Lu, Tiao,et al. Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation. 2013-01-01. |
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