Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications

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	Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications
	Liu, Baodan; Li, Jing; Yang, Wenjin; Zhang, Xinglai; Jiang, Xin; Bando, Yoshio; Liu, BD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
刊名	WILEY-V C H VERLAG GMBH
	2017-12-06
卷号	13 期号:45 页码:-
关键词	Band-gap Engineering Nanostructures Optoelectronic Properties Semiconductor Solid-solution
ISSN号	1613-6810
英文摘要	The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.; The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.
学科主题	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
资助机构	National Natural Science Foundation of China [51702326]; Knowledge Innovation Program of Institute of Metal Research, Chinese Academy of Sciences [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Basic Science Innovation Program of Shenyang National Laboratory for Materials Science [Y4NC6R1161]
公开日期	2018-01-10
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/78938]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, BD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Baodan,Li, Jing,Yang, Wenjin,et al. Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications[J]. WILEY-V C H VERLAG GMBH,2017,13(45):-.
APA	Liu, Baodan.,Li, Jing.,Yang, Wenjin.,Zhang, Xinglai.,Jiang, Xin.,...&Liu, BD .(2017).Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications.WILEY-V C H VERLAG GMBH,13(45),-.
MLA	Liu, Baodan,et al."Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications".WILEY-V C H VERLAG GMBH 13.45(2017):-.