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	Chiral phase transition at 180 degrees domain walls in ferroelectric PbTiO3 driven by epitaxial compressive strains
	Wang, Yu-Jia; Zhu, Yin-Lian; Ma, Xiu-Liang; Ma, XL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China.; Ma, XL (reprint author), Lanzhou Univ Technol, Sch Mat Sci & Engn, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China.
刊名	AMER INST PHYSICS
	2017-10-07
卷号	122期号:13页码:-
ISSN号	0021-8979
英文摘要	Chiral ferroelectric domain walls are theoretically predicted to be promising in novel electronic memory devices. In order to develop a chirality-based device, understanding the chiral phase transition is of great importance for chirality manipulation. In this work, we systematically studied the chiral phase transition at 180 degrees domain walls in ferroelectric PbTiO3 (PTO) under epitaxial compressive strains by first principles calculations. It is found that with the increase of the compressive strain, the Bloch components decrease due to the coupling of polarization and strain, while the components normal to domain walls increase because of the large stress gradients. The domain wall changes from a mixed Ising-Bloch type to the Ising type. It is also found that the domain wall energy increases with the increment of compressive strain, indicating that the spacings of 180 degrees domain walls would be large for the highly compressed PTO films. These findings may provide useful information for the development of novel ferroelectric devices. Published by AIP Publishing.; Chiral ferroelectric domain walls are theoretically predicted to be promising in novel electronic memory devices. In order to develop a chirality-based device, understanding the chiral phase transition is of great importance for chirality manipulation. In this work, we systematically studied the chiral phase transition at 180 degrees domain walls in ferroelectric PbTiO3 (PTO) under epitaxial compressive strains by first principles calculations. It is found that with the increase of the compressive strain, the Bloch components decrease due to the coupling of polarization and strain, while the components normal to domain walls increase because of the large stress gradients. The domain wall changes from a mixed Ising-Bloch type to the Ising type. It is also found that the domain wall energy increases with the increment of compressive strain, indicating that the spacings of 180 degrees domain walls would be large for the highly compressed PTO films. These findings may provide useful information for the development of novel ferroelectric devices. Published by AIP Publishing.
学科主题	Physics, Applied
语种	英语
资助机构	National Natural Science Foundation of China [51401212, 51571197, 51231007, 51671194, 51521091]; Doctoral Initiation Foundation of Liaoning Province [20141144]; National Basic Research Program of China [2014CB921002]; Key Research Program of Frontier Sciences CAS [QYZDJ-SSW-JSC010]
公开日期	2018-01-10
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79047]
专题	金属研究所_中国科学院金属研究所
通讯作者	Ma, XL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China.; Ma, XL (reprint author), Lanzhou Univ Technol, Sch Mat Sci & Engn, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China.
推荐引用方式 GB/T 7714	Wang, Yu-Jia,Zhu, Yin-Lian,Ma, Xiu-Liang,et al. Chiral phase transition at 180 degrees domain walls in ferroelectric PbTiO3 driven by epitaxial compressive strains[J]. AMER INST PHYSICS,2017,122(13):-.
APA	Wang, Yu-Jia,Zhu, Yin-Lian,Ma, Xiu-Liang,Ma, XL ,&Ma, XL .(2017).Chiral phase transition at 180 degrees domain walls in ferroelectric PbTiO3 driven by epitaxial compressive strains.AMER INST PHYSICS,122(13),-.
MLA	Wang, Yu-Jia,et al."Chiral phase transition at 180 degrees domain walls in ferroelectric PbTiO3 driven by epitaxial compressive strains".AMER INST PHYSICS 122.13(2017):-.

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