Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers

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	Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers
	Zhao, XT; Liu, W; Li, SK; Wang, TT; Liu, L; Song, YH; Ma, S; Zhao, XG; Zhang, ZD; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
刊名	NANOSCALE
	2018-04-28
卷号	10 期号:16 页码:7612-7618
关键词	Spin-orbit Torque Magnetic Tunnel-junctions Perpendicular Magnetization Anisotropy
ISSN号	2040-3364
英文摘要	A perpendicularly magnetized synthetic antiferromagnetic structure is a promising alternative to a single ferromagnetic layer in spintronic applications because of its low net magnetization and high thermal stability. In this work, the ferromagnetic layers in the synthetic antiferromagnetic structure are simplified to 'soft' Co70Fe30 layers with the aid of ultrathin Pt insert layers between the ferromagnetic layers and the exchange coupling Ru layer to lower the energy consumption. In the current-driven manipulation of the magnetization, asymmetric switching loops are observed, which originate from the edge domain walls induced by the growth of the electrode pads. The edge domain walls preserved beneath the electrode pad help the switching process skipping the nucleation stage, lowering the critical current density to the order of 10(6) A cm(-2). The present work broadens the choice of ferromagnetic layers for building an SAF structure and highlights a new way to utilize the synthetic antiferromagnetic structure as a building block in low-energy-consuming spintronic devices.; A perpendicularly magnetized synthetic antiferromagnetic structure is a promising alternative to a single ferromagnetic layer in spintronic applications because of its low net magnetization and high thermal stability. In this work, the ferromagnetic layers in the synthetic antiferromagnetic structure are simplified to 'soft' Co70Fe30 layers with the aid of ultrathin Pt insert layers between the ferromagnetic layers and the exchange coupling Ru layer to lower the energy consumption. In the current-driven manipulation of the magnetization, asymmetric switching loops are observed, which originate from the edge domain walls induced by the growth of the electrode pads. The edge domain walls preserved beneath the electrode pad help the switching process skipping the nucleation stage, lowering the critical current density to the order of 10(6) A cm(-2). The present work broadens the choice of ferromagnetic layers for building an SAF structure and highlights a new way to utilize the synthetic antiferromagnetic structure as a building block in low-energy-consuming spintronic devices.
学科主题	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
资助机构	Chinese Academy of Sciences [KJZD-EW-M05-3]; State Key Project of Research and Development of China [2017YFA0206302]; National Nature Science Foundation of China [51771198, 51590883, 51331006]
公开日期	2018-06-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79351]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, XT,Liu, W,Li, SK,et al. Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers[J]. NANOSCALE,2018,10(16):7612-7618.
APA	Zhao, XT.,Liu, W.,Li, SK.,Wang, TT.,Liu, L.,...&Liu, W .(2018).Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers.NANOSCALE,10(16),7612-7618.
MLA	Zhao, XT,et al."Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers".NANOSCALE 10.16(2018):7612-7618.