Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films

doi:10.1021/acs.jpcc.8b05058

	Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films
	An, YK; Wu, ZH; Sun, XK; Lin, Z; Wu ZH(吴忠华)
刊名	JOURNAL OF PHYSICAL CHEMISTRY C
	2018
卷号	122 期号:32 页码:18759-18768
ISSN号	1932-7447
DOI	10.1021/acs.jpcc.8b05058
文献子类	Article
英文摘要	The influences of oxygen partial pressure on the local structure, magnetic, and transport properties of (In0.89Fe0.06Cu0.05)(2)O-3 films deposited by different Ar-O-2 flow rate (10:0, 10:0.4, and 10:3.0) were studied systematically by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), Hall effect, room temperature (RT) magnetic measurements, and first-principles calculations. The detailed structural analyses indicate that the doped Fe atoms substitute for In3+ sites of the In2O3 lattices with +2 and +3 mixture valences for all the films. However, the majority of codoped Cu atoms form the Cu metal clusters in the film deposited at oxygen flow rate of 0 sccm. With increasing oxygen partial pressure, the Cu metal clusters completely disappear and all the Cu atoms are incorporated substitutionally into the In2O3 lattices at In sites. All the films exhibit intrinsic RT ferromagnetism, and Mott variable range hopping (VRH) transport behavior. The saturation magnetization (M-s) of the films monotonically decreases with increasing oxygen partial pressure, implying that the M-s strongly correlates with the concentration of oxygen vacancies. The first-principles calculations suggest that the oxygen vacancy can act to mediate the superexchange interaction between Fe atoms, leading to a ferromagnetic ground state in Fe-doped In2O3 system. However, the Cu codoping cannot be responsible for the observed ferromagnetic ordering in Fe/Cu codoped In2O3 system. The stable ferromagnetic ground state only can be obtained by the coexistence of oxygen vacancy and Cu codoping in the system. Therefore, it can be concluded that the bound magnetic polarons (BMP) involving oxygen vacancy defects may be responsible for the observed intrinsic ferromagnetic coupling, which can be remarkably influenced by the localization effect of carriers in the (In0.89Fe0.06Cu0.05)(2)O-3 films. These results provide a new sight for designing and manipulating the magnetic interaction of In2O3-based DMS systems.
WOS关键词	HIGH-TEMPERATURE FERROMAGNETISM ; INDIUM-TIN OXIDE ; DOPED IN2O3 ; THIN-FILMS ; SEMICONDUCTORS ; NANOPARTICLES ; BULK ; TRANSPARENT ; DEPOSITION
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
WOS记录号	WOS:000442462400060
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/286257]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	An, YK,Wu, ZH,Sun, XK,et al. Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2018,122(32):18759-18768.
APA	An, YK,Wu, ZH,Sun, XK,Lin, Z,&吴忠华.(2018).Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films.JOURNAL OF PHYSICAL CHEMISTRY C,122(32),18759-18768.
MLA	An, YK,et al."Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films".JOURNAL OF PHYSICAL CHEMISTRY C 122.32(2018):18759-18768.