Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes

doi:10.1039/c8nr05559a

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes
	Shen, Dezhen 4; Shan, Chongxin 1,4; Zhao, Haifeng 4; Li, Binghui 4; Zhang, Zhenzhong 4; Sun, Yuzhou 3,4; Jiang, Mingming 2,4; Li, Zhanguo 3,4
刊名	NANOSCALE
	2018-10-21
卷号	10 期号:39 页码:18774-18785
ISSN号	2040-3364
DOI	10.1039/c8nr05559a
通讯作者	Jiang, Mingming(mmjiang@nuaa.edu.cn) ; Shan, Chongxin(cxshan@zzu.edu.cn) ; Shen, Dezhen(shendz@ciomp.ac.cn)
英文摘要	Semiconducting micro/nanostructures possessing naturally optical waveguiding behaviors and Fabry-Perot (F-P) like resonances are emerging as versatile building blocks for the assembly of photonic and optoelectronic devices, such as photodetectors, light-emitting diodes, lasers and so on. Individual ZnO micro/nanowires with a rectangular cross-section, such as microwires and microbelts possessing naturally smooth facets along both sides for good optical feedback, can be employed as an underlying F-P mode microcavity whilst as the gain medium for light amplification. In this context, electrically pumped F-P mode microlasers comprising a single ZnO:Ga microbelt and p-GaN substrate have been realized. By treating as the precondition, electrically driven exciton-polariton light-emitting behavior was achieved from the heterojunction diodes, which could be ascribed to strong exciton-photon coupling and waveguided nature of the synthesized microbelts. Once the applied bias exceeded the threshold value, an electrically pumped F-P mode lasing behavior could be observed, the lasing peaks centered at 410.5 nm and 450.5 nm respectively, accompanied with a dramatic narrowing of the spectral line-width to be around 1.0 nm emerging on the waveguided emission spectrum. Therefore, the realization of electrically pumped F-P mode lasing using single microbelt based heterojunction diodes opens the door not only to the fabrication of coherent light sources and model systems for waveguided resonators, but also affords a competitive candidate to develop electrically pumped and ultralow threshold polariton lasers.
资助项目	National Natural Science Foundation of China[11574307] ; National Natural Science Foundation of China[U1604263] ; National Science Fund for Distinguished Young Scholars[11727902] ; National Science Fund for Distinguished Young Scholars[61425021] ; National Science Fund for Distinguished Young Scholars[61525404] ; 100 Talents Program of the Chinese Academy of Sciences
WOS关键词	LIGHT-EMITTING DEVICES ; NANOWIRE LASERS ; MICROWIRE ; POLARITONS ; EMISSION ; CAVITIES ; SURFACE ; ARRAYS ; MODES
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000448421100040
资助机构	National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; 100 Talents Program of the Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60432]
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Shen, Dezhen; Shan, Chongxin; Jiang, Mingming
作者单位	1.Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450001, Henan, Peoples R China 2.Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 210016, Jiangsu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dongnanhu Rd, Changchun 130033, Jilin, Peoples R China
推荐引用方式 GB/T 7714	Shen, Dezhen,Shan, Chongxin,Zhao, Haifeng,et al. Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes[J]. NANOSCALE,2018,10(39):18774-18785.
APA	Shen, Dezhen.,Shan, Chongxin.,Zhao, Haifeng.,Li, Binghui.,Zhang, Zhenzhong.,...&Li, Zhanguo.(2018).Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes.NANOSCALE,10(39),18774-18785.
MLA	Shen, Dezhen,et al."Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes".NANOSCALE 10.39(2018):18774-18785.