Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer

doi:10.1117/12.2261426

	Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer
	Lei, Qiang ; Lei Q(雷强); Gao, Yang ; Li, Jun-Ru ; Jia, Le
刊名	Proceedings of SPIE - The International Society for Optical Engineering
	2017
卷号	10244 页码:102441W
关键词	RF MEMS capacitive switch dielectric layer roughness latching down-state capacitance degradation
ISSN号	0277-786X
DOI	10.1117/12.2261426
文献子类	Proceedings Paper
英文摘要	In order to obtain the high-fidelity model of latching failure threshold power of the capacitive RF MEMS switch, it is necessary to find out the rough dielectric layer effect on its down-state capacitance degradation. The comparative modeling method between the 3-D electromagnetic simulation and the equivalent circuit simulation is proposed. First, the simulation curve of the switch isolation (S-21) is attained at different roughness levels with the HFSS 3-D electromagnetic model. And then the simulation curve of the S-21 of the ADS equivalent circuit model is consistent with the simulation result of the 3-D electromagnetic as far as possible by tuning the down-state capacitance in the equivalent circuit. Hence, the relationship between the dielectric layer roughness and the down-state capacitance is identified. By changing the roughness level of dielectric layer and repeating the above steps, the relationship between the dielectric layer roughness and the down-state capacitance degradation is identified. Rationality and feasibility of the method is verified by comparing the calculated values of the down-state capacitance with the measured values in a relevant literature. And analytical equation of the latching failure threshold power of the capacitive RF MEMS switch with perfect smooth dielectric layer is modified, according to the relationship between the dielectric layer roughness and the down-state capacitance degradation, which is also suitable for predicting the power handling capacity of the switch with rough dielectric layer.
电子版国际标准刊号	1996-756X
会议地点	Shanghai, PEOPLES R CHINA
会议日期	OCT 10-12, 2016
WOS研究方向	Science & Technology - Other Topics ; Optics
语种	英语
ISBN号	978-1-5106-0989-1; 978-1-5106-0990-7
WOS记录号	WOS:000394540100067
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/285411]
专题	高能物理研究所_实验物理中心
作者单位	1.Chinese Acad Sci, Inst High Energy Phys, State Key Lab Particle Detect & Elect, Beijing 100049, Peoples R China 2.Chongqing Univ, Natl Key Lab Fundamental Sci Micro Nanodevice & S, Chongqing 400044, Peoples R China 3.Southwest Univ Sci & Technol, Sch Informat Engn, Mianyang 621010, Sichuan, Peoples R China 4.China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Lei, Qiang,Lei Q,Gao, Yang,et al. Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer[J]. Proceedings of SPIE - The International Society for Optical Engineering,2017,10244:102441W.
APA	Lei, Qiang,雷强,Gao, Yang,Li, Jun-Ru,&Jia, Le.(2017).Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer.Proceedings of SPIE - The International Society for Optical Engineering,10244,102441W.
MLA	Lei, Qiang,et al."Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer".Proceedings of SPIE - The International Society for Optical Engineering 10244(2017):102441W.