Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

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	Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
	Gong, Q ; Liang, JB ; Xu, B ; Ding, D ; Li, HX ; Jiang, C ; Zhou, W ; Liu, FQ ; Wang, ZG ; Qiu, XH
刊名	JOURNAL OF CRYSTAL GROWTH
	1998-09-01
卷号	192 期号:3-4 页码:376-380
关键词	Nanometer Island Inas Molecular Beam Epitaxy Atomic Force Microscopy Quantum Dot
ISSN号	0022-0248
英文摘要	Atomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value From the real value of the base width of InAs islands. (C) 1998 Elsevier Science B.V. All rights reserved.
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000075840000003
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/74289]
专题	中国科学院化学研究所
通讯作者	Gong, Q
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing 100082, Peoples R China
推荐引用方式 GB/T 7714	Gong, Q,Liang, JB,Xu, B,et al. Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1998,192(3-4):376-380.
APA	Gong, Q.,Liang, JB.,Xu, B.,Ding, D.,Li, HX.,...&Bai, CL.(1998).Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,192(3-4),376-380.
MLA	Gong, Q,et al."Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 192.3-4(1998):376-380.