Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene

doi:10.1109/LED.2009.2013976

CORC > 化学研究所 > 中国科学院化学研究所

	Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene
	Shi, Shengwei ; Peng, Junbiao 1; Lin, Jian 2; Ma, Dongge 2
刊名	IEEE ELECTRON DEVICE LETTERS
	2009-04-01
卷号	30 期号:4 页码:343-345
关键词	Interface Dipole On/off Ratio Pentacene Reliability Write Once Read Many Times (Worm)
ISSN号	0741-3106
DOI	10.1109/LED.2009.2013976
英文摘要	We realized an organic electrical memory device with a simple structure based on single-layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an on/off current ratio as high as nearly 10(6), which was two orders of magnitude higher than previous results, and the storage time was more than 576 h. The current transition process is attributed to the formation and damage of the Interface dipole at different electric fields, in which the current conduction showed a transition from ohmic conductive current to Fowler-Nordheim tunneling current. After the transition from ON- to OFF-state, the device tended to remain in the OFF-State even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times memory.
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000264629100011
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/66885]
专题	中国科学院化学研究所
通讯作者	Shi, Shengwei
作者单位	1.S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China 2.Chinese Acad Sci, State Key Lab Polymer Phys & Chem, Changchun Inst Appl Chem, Changchun 130022, Peoples R China
推荐引用方式 GB/T 7714	Shi, Shengwei,Peng, Junbiao,Lin, Jian,et al. Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene[J]. IEEE ELECTRON DEVICE LETTERS,2009,30(4):343-345.
APA	Shi, Shengwei,Peng, Junbiao,Lin, Jian,&Ma, Dongge.(2009).Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene.IEEE ELECTRON DEVICE LETTERS,30(4),343-345.
MLA	Shi, Shengwei,et al."Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene".IEEE ELECTRON DEVICE LETTERS 30.4(2009):343-345.