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Epitaxial growth of large-area bilayer graphene on Ru(0001)
Que, Yande1; Xiao, Wende1; Fei, Xiangmin1; Chen, Hui1; Huang, Li1,2; Du, S. X.1; Gao, H. -J.1
刊名APPLIED PHYSICS LETTERS
2014-03-03
卷号104期号:9
ISSN号0003-6951
DOI10.1063/1.4868021
英文摘要Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moire pattern with a periodicity of similar to 21.5 nm and a mixture of AA-and AB-stacking. The root 3 x root 3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized p-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene. (C) 2014 AIP Publishing LLC.
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000332729200091
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/50475]  
专题中国科学院化学研究所
通讯作者Xiao, Wende
作者单位1.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Que, Yande,Xiao, Wende,Fei, Xiangmin,et al. Epitaxial growth of large-area bilayer graphene on Ru(0001)[J]. APPLIED PHYSICS LETTERS,2014,104(9).
APA Que, Yande.,Xiao, Wende.,Fei, Xiangmin.,Chen, Hui.,Huang, Li.,...&Gao, H. -J..(2014).Epitaxial growth of large-area bilayer graphene on Ru(0001).APPLIED PHYSICS LETTERS,104(9).
MLA Que, Yande,et al."Epitaxial growth of large-area bilayer graphene on Ru(0001)".APPLIED PHYSICS LETTERS 104.9(2014).
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