Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction

doi:10.1002/aelm.201700373

CORC > 化学研究所 > 中国科学院化学研究所

	Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction
	Zhao, Liyun 1,2; Wang, Xuewen 3; Zhang, Zhepeng 2,4; Yang, Pengfei 2; Chen, Jie 2,5; Chen, Yanqi 2; Wang, Hao 2; Shang, Qiuyu 2; Zhang, Yuyang 6,7; Zhang, Yanfeng 2,4
刊名	ADVANCED ELECTRONIC MATERIALS
	2017-12-01
卷号	3 期号:12
关键词	Cds Heterojunctions Interlayer Excitons Mos2 Surface States
ISSN号	2199-160X
DOI	10.1002/aelm.201700373
英文摘要	Van der Waals heterojunctions of 2D layered semiconductors and nonlayered technological important II-V semiconductors provide unprecedented opportunities to engineer exciton and carrier dynamics in 2D optoelectronic devices. However, fabrication of such artificial heterojunctions with type-II band alignment structure and realization of interlayer excitons is challenging. Here, CdS-MoS2 type-II heterojunctions vertically stacked with few layered MoS2 and ultrathin CdS film are reported. Steady-state spectroscopy and time-resolved photoluminescence spectroscopy are used to study exciton and carrier dynamics in these heterojunctions. The surface states of the ultrathin CdS film caused by dangling bonds mediate interlayer exciton emission located at 753 nm in a CdS-bilayer MoS2 heterojunction via charge transition between the MoS2 indirect band and the CdS valence band. As a contrast, the surface states of CdS impede the recombination of interlayer excitons in a CdS-monolayer MoS2 heterojunction. These results are helpful for development of high-performance ultrathin optoelectronic and energy devices including light emission diodes, solar cells, and photodetectors.
语种	英语
出版者	WILEY
WOS记录号	WOS:000417647400017
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/45291]
专题	中国科学院化学研究所
通讯作者	Leng, Jiancai; Liu, Zheng; Zhang, Qing
作者单位	1.Qilu Univ Technol, Sch Sci, Jinan 250353, Shandong, Peoples R China 2.Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China 3.Nanyang Technol Univ, Ctr Programmable Mat, Sch Mat Sci & Engn, Singapore 639798, Singapore 4.Peking Univ, Acad Adv Interdisciplinary Studies, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China 5.Natl Ctr Nanosci & Technol, Div Nanophoton, CAS Key Lab Standardizat & Measurement Nanotechno, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China 6.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 10049, Peoples R China 7.Univ Chinese Acad Sci, CAS Key Lab Vacuum Phys, Beijing 10049, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Liyun,Wang, Xuewen,Zhang, Zhepeng,et al. Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction[J]. ADVANCED ELECTRONIC MATERIALS,2017,3(12).
APA	Zhao, Liyun.,Wang, Xuewen.,Zhang, Zhepeng.,Yang, Pengfei.,Chen, Jie.,...&Zhang, Qing.(2017).Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction.ADVANCED ELECTRONIC MATERIALS,3(12).
MLA	Zhao, Liyun,et al."Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction".ADVANCED ELECTRONIC MATERIALS 3.12(2017).