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Iron Carbidization on Thin-Film Silica and Silicon: A Near-Ambient-Pressure X-ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study
Zhou, Xiong1,2; Mannie, Gilbere J. A.1; Yin, Junqing1; Yu, Xin1,2; Weststrate, C. J.3; Wen, Xiaodong1,2; Wu, Kai4; Yang, Yong1,2; Li, Yongwang1,2; Niemantsverdriet, J. W.1,3
刊名ACS CATALYSIS
2018-08-01
卷号8期号:8页码:7326-7333
关键词Iron Carbidization Interface Effect Nap-xps Surface Reaction Model Catalyst
ISSN号2155-5435
DOI10.1021/acscatal.8b02076
英文摘要Model catalysts consisting of iron particles with similar size deposited on thin-film silica (Fe/SiO2) and on silicon (Fe/Si) were used to study iron carbidization in a CO atmosphere using in situ near ambient -pressure X-ray photoelectron spectroscopy. Significant differences were observed for CO adsorption, CO dissociation, and iron carbidization when the support was changed from thin-film silica to silicon. Stronger adsorption of CO on Fe/Si than that on Fe/SiO2 was evident from the higher CO equilibrium coverage found at a given temperature in the presence of 1 mbar of CO gas. On thin-film silica, iron starts to carbidize at 150 degrees C, while the onset of carbidization is at 100 degrees C on the silicon support. The main reason for the different onset temperature for carbidization is the efficiency of removal of oxygen species after CO dissociation. On thin-film silica, oxygen species formed by CO dissociation block the iron surface until similar to 150 degrees C, when CO2 formation removes surface oxygen. Instead, on the silicon support, oxygen species readily spill over to the silicon. As a consequence, oxygen removal is not rate-limiting anymore and carbidization of iron can proceed at a lower temperature.
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000441112400051
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/42293]  
专题中国科学院化学研究所
通讯作者Zhou, Xiong
作者单位1.Synfuels China Technol Co Ltd, SynCat Beijing, Leyuan South St 2,1, Beijing 101407, Peoples R China
2.Chinese Acad Sci, Inst Coal Chem, State Key Lab Coal Convers, Taiyuan 030001, Shanxi, Peoples R China
3.Syngaschem BV, SynCat DIFFER, POB 6336, NL-5600 HH Eindhoven, Netherlands
4.Peking Univ, Beijing Natl Lab Mol Sci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
推荐引用方式
GB/T 7714
Zhou, Xiong,Mannie, Gilbere J. A.,Yin, Junqing,et al. Iron Carbidization on Thin-Film Silica and Silicon: A Near-Ambient-Pressure X-ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study[J]. ACS CATALYSIS,2018,8(8):7326-7333.
APA Zhou, Xiong.,Mannie, Gilbere J. A..,Yin, Junqing.,Yu, Xin.,Weststrate, C. J..,...&Niemantsverdriet, J. W..(2018).Iron Carbidization on Thin-Film Silica and Silicon: A Near-Ambient-Pressure X-ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study.ACS CATALYSIS,8(8),7326-7333.
MLA Zhou, Xiong,et al."Iron Carbidization on Thin-Film Silica and Silicon: A Near-Ambient-Pressure X-ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study".ACS CATALYSIS 8.8(2018):7326-7333.
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