Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators

	Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators
	Lingjie Du; Tingxin Li; Wenkai Lou; Xingjun Wu; Xiaoxue Liu; Zhongdong Han; Chi Zhang; Gerard Sullivan; Amal Ikhlassi; Kai Chang
刊名	PHYSICAL REVIEW LETTERS
	2017
卷号	119 期号:5 页码:056803
学科主题	半导体物理
公开日期	2018-06-01
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28496]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Lingjie Du,Tingxin Li,Wenkai Lou,et al. Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators[J]. PHYSICAL REVIEW LETTERS,2017,119(5):056803.
APA	Lingjie Du.,Tingxin Li.,Wenkai Lou.,Xingjun Wu.,Xiaoxue Liu.,...&Rui-Rui Du.(2017).Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators.PHYSICAL REVIEW LETTERS,119(5),056803.
MLA	Lingjie Du,et al."Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators".PHYSICAL REVIEW LETTERS 119.5(2017):056803.