Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction

doi:10.1021/acsami.9b03329

	Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction
	Liu, Xiangzhi 1,2; Zhou, Quan 1,3; Luo, Shi 1; Du, Haiwei 1; Cao, Zhensong 4; Peng, Xiaoyu1 ; Feng, Wenlin 2; Shen, Jun1 ; Wei, Dapeng1
刊名	ACS APPLIED MATERIALS & INTERFACES
	2019-05-15
卷号	11 期号:19 页码:17663-17669
关键词	graphene nanoparticle photodetector hot electron Schottky barrier thermionic emission
ISSN号	1944-8244
DOI	10.1021/acsami.9b03329
通讯作者	Shen, Jun(shenjun@cigit.ac.cn) ; Wei, Dapeng(dpwei@cigit.ac.cn)
英文摘要	Because of the slow relaxation process according to weak acoustic phonon interaction, the photothermionic effect in graphene could be much more obvious than in the metal film, so a graphene heterojunction photodetector based on the photothermionic effect is promising for infrared imaging applications. However, the 2.3% absorption rate of the graphene film presents a severe limitation. Here, in situ grown graphene nanowalls (GNWs) were integrated on the silicon substrate interfaced with Au nanoparticles. Because of the strong infrared absorption and hot-carrier relaxation process in GNWs, the as prepared GNWs/Au/silicon heterojunction has a photo to dark ratio of 2 X 10(4), responsivity of 138 mA/W, and linear dynamic range of 89.7 dB, with a specific detectivity of 1.4 X 10(10) and 1.6 x 10(9) cm Hz(1/2)/W based on calculated and measured noise, respectively, in 1550 nm at room temperature, and has the best performance among silicon-compatible infrared photodetectors without any complicated waveguide structures. Obvious photoresponses are also detected in the mid-infrared and terahertz band. The interface Au particle is found to reduce the barrier height and enhance absorption. The device structure in this report could be compatible with the semiconductor process, so that infrared photodetectors with high integration density and low cost could be potentially realized.
资助项目	NSFC[61705229] ; Youth Innovation Promotion Association of CAS[2015316] ; Youth Innovation Promotion Association of CAS[2018416] ; Project of Chongqing brain science Collaborative Innovation Center ; Project of CAS Western Young Scholar ; Project of CQ CSTC[cstc2017zdcy-zdyfX0001] ; Project of CQ CSTC[cstc2017zdcy-zdyfX0078]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000468364500059
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/7895]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Shen, Jun; Wei, Dapeng
作者单位	1.Chinese Acad Sci, Chongqing Key Lab Multiscale Mfg Technol, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 2.Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China 3.China Aerodynam Res & Dev Ctr, Mianyang 621000, Peoples R China 4.Chinese Acad Sci, Key Lab Atmospher Opt, Hefei 230031, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Liu, Xiangzhi,Zhou, Quan,Luo, Shi,et al. Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(19):17663-17669.
APA	Liu, Xiangzhi.,Zhou, Quan.,Luo, Shi.,Du, Haiwei.,Cao, Zhensong.,...&Wei, Dapeng.(2019).Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction.ACS APPLIED MATERIALS & INTERFACES,11(19),17663-17669.
MLA	Liu, Xiangzhi,et al."Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction".ACS APPLIED MATERIALS & INTERFACES 11.19(2019):17663-17669.