Characteristics of p-i-n diodes basing on displacement damage detector | |
Sun, J (Sun Jing)[ 1,2 ]; Guo, Q (Guo Qi)[ 1 ]; Yu, X (Yu Xin)[ 1,2 ]; He, CF (He Cheng-Fa)[ 1 ]; Shi, WL (Shi Wei-Lei)[ 1 ]; Zhang, XY (Zhang Xing-Yao)[ 1 ] | |
刊名 | RADIATION PHYSICS AND CHEMISTRY |
2017 | |
卷号 | 139期号:10页码:11-16 |
关键词 | Displacement damage NIEL P-i-n photodiode Damage enhancement factor |
ISSN号 | 0969-806X |
DOI | 10.1016/j.radphyschem.2017.05.017 |
英文摘要 | A displacement damage detector is designed and its characteristics are tested with 10 MeV proton irradiation. The testing result shows that the detector's readout changes linearly with the fluence of proton beam up to 10(12) proton/cm(2). However, a significant damage enhancement factor has been observed for 1.8 MeV electron irradiation when the classic non-ionizing energy loss (NIEL) is used for calculating equivalent displacement damage. Since the prediction based on classical NIEL model cannot fit low energy incident well, low energy particles induced displacement damage mechanism, defect generation, recombination and effective NIEL modification is discussed by molecular dynamics (MD) model. The effective NIEL is validated by measuring the detector's response under 1.8 MeV electron irradiation. The equivalent displacement damage between different particles is discussed through scaling factor, damage factor, and damage enhancement factor. By this method, the application of degradation function can be expanded to low energy particles by using effective NIEL. |
WOS记录号 | WOS:000403988900003 |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/5783] |
专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 |
通讯作者 | Yu, X (Yu Xin)[ 1,2 ] |
作者单位 | 1.Xinjiang Tech Inst Phys & Chem CAS, Xinjiang Key Lab Elect Informat Mat & Device, Key Lab Funct Mat & Devices Special Environm CAS, Urumqi 830011, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Sun, J ,Guo, Q ,Yu, X ,et al. Characteristics of p-i-n diodes basing on displacement damage detector[J]. RADIATION PHYSICS AND CHEMISTRY,2017,139(10):11-16. |
APA | Sun, J ,Guo, Q ,Yu, X ,He, CF ,Shi, WL ,&Zhang, XY .(2017).Characteristics of p-i-n diodes basing on displacement damage detector.RADIATION PHYSICS AND CHEMISTRY,139(10),11-16. |
MLA | Sun, J ,et al."Characteristics of p-i-n diodes basing on displacement damage detector".RADIATION PHYSICS AND CHEMISTRY 139.10(2017):11-16. |
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