Characteristics of p-i-n diodes basing on displacement damage detector
Sun, J (Sun Jing)[ 1,2 ]; Guo, Q (Guo Qi)[ 1 ]; Yu, X (Yu Xin)[ 1,2 ]; He, CF (He Cheng-Fa)[ 1 ]; Shi, WL (Shi Wei-Lei)[ 1 ]; Zhang, XY (Zhang Xing-Yao)[ 1 ]
刊名RADIATION PHYSICS AND CHEMISTRY
2017
卷号139期号:10页码:11-16
关键词Displacement damage NIEL P-i-n photodiode Damage enhancement factor
ISSN号0969-806X
DOI10.1016/j.radphyschem.2017.05.017
英文摘要

A displacement damage detector is designed and its characteristics are tested with 10 MeV proton irradiation. The testing result shows that the detector's readout changes linearly with the fluence of proton beam up to 10(12) proton/cm(2). However, a significant damage enhancement factor has been observed for 1.8 MeV electron irradiation when the classic non-ionizing energy loss (NIEL) is used for calculating equivalent displacement damage. Since the prediction based on classical NIEL model cannot fit low energy incident well, low energy particles induced displacement damage mechanism, defect generation, recombination and effective NIEL modification is discussed by molecular dynamics (MD) model. The effective NIEL is validated by measuring the detector's response under 1.8 MeV electron irradiation. The equivalent displacement damage between different particles is discussed through scaling factor, damage factor, and damage enhancement factor. By this method, the application of degradation function can be expanded to low energy particles by using effective NIEL.

WOS记录号WOS:000403988900003
内容类型期刊论文
源URL[http://ir.xjipc.cas.cn/handle/365002/5783]  
专题新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
通讯作者Yu, X (Yu Xin)[ 1,2 ]
作者单位1.Xinjiang Tech Inst Phys & Chem CAS, Xinjiang Key Lab Elect Informat Mat & Device, Key Lab Funct Mat & Devices Special Environm CAS, Urumqi 830011, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Sun, J ,Guo, Q ,Yu, X ,et al. Characteristics of p-i-n diodes basing on displacement damage detector[J]. RADIATION PHYSICS AND CHEMISTRY,2017,139(10):11-16.
APA Sun, J ,Guo, Q ,Yu, X ,He, CF ,Shi, WL ,&Zhang, XY .(2017).Characteristics of p-i-n diodes basing on displacement damage detector.RADIATION PHYSICS AND CHEMISTRY,139(10),11-16.
MLA Sun, J ,et al."Characteristics of p-i-n diodes basing on displacement damage detector".RADIATION PHYSICS AND CHEMISTRY 139.10(2017):11-16.
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