Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy

doi:10.1007/s11433-018-9320-x

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy
	Li, DaBing 3; Li, XiaoHang 1; Liu, HeNan 3; Wang, Yong 2,3; Wu, You 2,3; Ben, JianWei 2,3; Jiang, Ke 2,3; Shi, ZhiMing 3; Jia, YuPing 3; Sun, XiaoJuan 3
刊名	SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
	2019-06-01
卷号	62 期号:6 页码:6
关键词	pit defects surface potential electron concentration
ISSN号	1674-7348
DOI	10.1007/s11433-018-9320-x
通讯作者	Sun, XiaoJuan(sunxj@ciomp.ac.cn) ; Li, DaBing(lidb@ciomp.ac.cn)
英文摘要	Surface potentials in the vicinity of V-pits (cone bottom) and U-pits (blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet (UV) light-assisted Kelvin probe force microscopy (KPFM). The band structure models are established to understand variation of the surface potentials at the pits and planar surface with and without UV light. The photo-generated carrier behavior at the pit defects is studied. According to the surface potential results, it can be deduced that the carrier distributions around the V- and U-pits are uneven. In dark, the electron concentration at the bottom of V-pit (30n(0)) and Upit (15n(0)) are higher than that at planar surface (n(0)). Under UV light, for V-pit, the electron concentration at the cone bottom (4.93x10(11)n(0)) is lower than that at the surrounding planar surface (5.68x10(13)n(0)). For U-pit, the electron concentration at the blunt bottom is 1.35x10(12)n(0), which is lower than that at the surrounding planar surface (6.13x10(13)n(0)). The non-equilibrium electron concentrations at different locations are calculated. Based on the non-equilibrium electron concentration, it can be concluded that the carrier recombination rate at pit defects is higher than that at planar surface.
资助项目	National Key R&D Program of China[2016YFB0400101] ; National Science Fund for Distinguished Young Scholars[61725403] ; National Natural Science Foundation of China[61574142] ; National Natural Science Foundation of China[61322406] ; National Natural Science Foundation of China[61704171] ; National Natural Science Foundation of China[11705206] ; National Natural Science Foundation of China[61774065] ; Key Program of the International Partnership Program of Chinese Academy of Sciences[181722KYSB20160015] ; Special Project for Inter-government Collaboration of the State Key Research and Development Program[2016YFE0118400] ; Science and Technology Service Network Initiative of the Chinese Academy of Sciences ; Jilin Provincial Science & Technology Department[20180201026GX] ; CAS Interdisciplinary Innovation Team ; Youth Innovation Promotion Association of Chinese Academy of Sciences[2015171] ; King Abdullah University of Science and Technology (KAUST) Baseline[BAS/1/1664-01-01] ; Gulf Cooperation Council (GCC) Research Council[REP/1/3189-01-01] ; [URF/1/3437-01-01]
WOS关键词	MULTIPLE-QUANTUM WELLS ; V-PIT ; GROWTH ; EFFICIENCY ; EMISSION
WOS研究方向	Physics
语种	英语
出版者	SCIENCE PRESS
WOS记录号	WOS:000454916100001
资助机构	National Key R&D Program of China ; National Science Fund for Distinguished Young Scholars ; National Natural Science Foundation of China ; Key Program of the International Partnership Program of Chinese Academy of Sciences ; Special Project for Inter-government Collaboration of the State Key Research and Development Program ; Science and Technology Service Network Initiative of the Chinese Academy of Sciences ; Jilin Provincial Science & Technology Department ; CAS Interdisciplinary Innovation Team ; Youth Innovation Promotion Association of Chinese Academy of Sciences ; King Abdullah University of Science and Technology (KAUST) Baseline ; Gulf Cooperation Council (GCC) Research Council
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60125]
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Li, DaBing; Sun, XiaoJuan
作者单位	1.KAUST, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China
推荐引用方式 GB/T 7714	Li, DaBing,Li, XiaoHang,Liu, HeNan,et al. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2019,62(6):6.
APA	Li, DaBing.,Li, XiaoHang.,Liu, HeNan.,Wang, Yong.,Wu, You.,...&Kai, CuiHong.(2019).Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,62(6),6.
MLA	Li, DaBing,et al."Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 62.6(2019):6.