Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory
Zhou, Guangdong1,2; Yang, Xiude2; Xiao, Lihua1; Sun, Bai3; Zhou, Ankun4,5
刊名APPLIED PHYSICS LETTERS
2019-04-22
卷号114期号:16页码:5
ISSN号0003-6951
DOI10.1063/1.5089147
通讯作者Zhou, Guangdong(zhougd@swu.edu.cn) ; Sun, Bai(bsun@swjtu.edu.cn)
英文摘要A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors. Published under license by AIP Publishing.
WOS研究方向Physics
语种英语
WOS记录号WOS:000466264600042
内容类型期刊论文
源URL[http://ir.kib.ac.cn/handle/151853/66860]  
专题昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室
通讯作者Zhou, Guangdong; Sun, Bai
作者单位1.Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China
2.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
3.Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
4.Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Yunnan, Peoples R China
5.Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
推荐引用方式
GB/T 7714
Zhou, Guangdong,Yang, Xiude,Xiao, Lihua,et al. Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory[J]. APPLIED PHYSICS LETTERS,2019,114(16):5.
APA Zhou, Guangdong,Yang, Xiude,Xiao, Lihua,Sun, Bai,&Zhou, Ankun.(2019).Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory.APPLIED PHYSICS LETTERS,114(16),5.
MLA Zhou, Guangdong,et al."Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory".APPLIED PHYSICS LETTERS 114.16(2019):5.
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